Publications

Journal Articles

1. MVS Chandrashekhar, C.I. Thomas, Hui Li, Amit Lal, M.G. Spencer, Appl. Phys. Lett., 88, 033506 (2006),”Demonstration of a 4H SiC betavoltaic cell”

2. MVS Chandrashekar, C.I. Thomas, M.G. Spencer, Appl. Phys. Lett., 89, 042103 (2006),Measurement of the mean electron-hole pair ionization energy in 4H SiC”

3. MVS Chandrashekhar, Rajesh Duggirala, Amit Lal, M.G. Spencer, Appl. Phys. Lett., 91, 053511 (2007), “4H SiC betavoltaic powered temperature transducer”

4. MVS Chandrashekhar C.I. Thomas, Hui Li, Amit Lal, M.G. Spencer, Mat Sci. For., 527-529, 1351 (2006)

5. MVS Chandrashekhar, C.I. Thomas, J. Lu, M.G. Spencer, Appl. Phys. Lett., 90, 173509 (2007), “Electronic properties of a 3C/4H SiC polytype heterojunction formed on the Si face”

6. MVS Chandrashekhar, C.I. Thomas, J. Lu, Michael G. Spencer, Appl. Phys. Lett., 91, 033503 (2007) Observation of a two dimensional electron gas formed in a polarization doped C-face 3C/4H SiC heteropolytype junction”

7. Ho Young Cha, Huaqiang Wu, MVS Chandrashekhar, YC Choi, S. Chae, G. Koley and M.G. Spencer, Nanotech. 17, 1264 (2006)“Fabrication and characterization of pre-aligned gallium nitride nanowire field-effect transistors”

8. Huaqiang Wu, Ho-Young Cha, MVS Chandrashekhar, G. Koley, and M. G. Spencer, J. Elec. Mat., 35, 670 (2006) “High Yield GaN Nanowire FET Fabrication and Characterizations,”

9. Felbinger, J. G.; Chandra, M. V. S.; Sun, Y.; Eastman, L. F.; Wasserbauer, J.; Faili, F.; Babic, D.; Francis, D.; Ejeckam, F., IEEE Elec. Dev. Lett., 28, 948 (2007)“Comparison of GaN HEMTs on Diamond and SiC Substrates”

10. Junxia Shia, M.V.S. Chandrashekhar, Jesse Reiherzer,William J. Schaff, Jie Lu, Francis J. Disalvo, Michael G. Spencer, J. Crystal Growth, doi:10.1016/j.jcrysgro.2007.10.020 (2007) “Effect of growth temperature on Eu incorporation in GaN powders”

11. Jahan M. Dawlaty, Shriram Shivaraman, Mvs Chandrashekhar, Farhan Rana, and Michael G. Spencer, Appl. Phys. Lett., 92, 042116 (2008), “Measurement of Ultrafast Carrier Dynamics in Epitaxial Graphene”

12. Z. Cai, S. Garzon, MVS Chandrasekhar, R. A. Webb and G. Koley, Journal of Electronic Materials, DOI 10.1007/s11664-007-0353-8 (2007)” Synthesis and properties of high quality InN nanowires and nano-networks,”

13. Jahan M. Dawlaty, Shriram Shivaraman, Jared Strait, Paul George, Mvs Chandrashekhar, Farhan Rana, Michael G. Spencer, Dmitry Veksler, Yunqing Chen, arXiv:0801.3302v1 [cond-mat.mtrl-sci] (2008) “Measurement of the Optical Absorption Spectra of Epitaxial Graphene from Terahertz to Visible”

Conference Papers/Presentations

1. MVS Chandrashekhar, C.I. Thomas, Hui Li, AMit Lal and M.G. Spencer,”Demonstration of a 4H SiC Betavoltaic Cell” Presented at International Conference for SiC and Related Materials (ICSCRM) 2005

2. C.I. Thomas, MVS Chandrashekhar, M.G. Spencer “Investigation of a C-face 3C/4H SiC Polytype Heterojunction”, Presented at ICSCRM 2005, Pittsburgh, PA

3. C.I. Thomas, MVS Chandrashekhar, Yu. Makarov, M.G. Spencer “Increased growth rates of 4H SiC for SiH4-C3H8-H2 System in a vertical cold wall reactor using HCl”, Presented at ICSCRM 2005, Pittsburgh, PA

4. MVS Chandrashekhar, CI Thomas, M.G. Spencer,”Diffusion of boron into SiC from a boro-silicate glass source” Presented at Materials Research Society (MRS) Spring meeting 2006, San Francisco, CA

5. MVS Chandrashekhar, CI Thomas, M.G. Spencer, “Measurement of the mean electron-hole pair ionization energy in4H SiC” Presented at MRS Spring meeting 2006, San Francisco, CA

6. MVS CHandrashekhar, CI Thomas, Brian Noel, M.G. Spencer, “Seedless Coalescence of Pendeoepitaxial 3C SiC on High Aspect Ratio Si Posts” Presented at MRS Spring meeting 2006, San Francisco, CA

7. CI Thomas, MVS Chandrashekhar, Yu. Makarov, M.G. Spencer, “HCl Induced 4H SiC Growt Rate Increases and Morphology Issues in a Vertical Cold Wall Reactor”, Presented at MRS Spring meeting 2006, San Francisco, CA

8. CI Thomas, MVS Chandrashekhar, MG Spencer, “Demonstration of a 2 dimension electron gas in 3C/4H SiC Polytype heterojunctions”, Presented at MRS Spring meeting 2006, San Francisco, CA

9. MG Spencer, MVS Chandrashekhar, CI Thomas, Jie Lu, Ho Young Cha, G. Koley, “Evidence for two dimensional electron and hole gases in 3C/4H SiC and 3C/6H SiC heteropolytype junctions”, invited talk presented at WOCSEMAD, 2006, Sweden

10. J. Felbinger, M. V. S. Chandra, Y. Sun, L. F. Eastman, F. Ejeckam, D. Francis and J. Wasserbauer “Fabrication & Characterization of GaN-on-Diamond HEMTs” presented at WOCSEMMAD, Feb 18-22, 2007, Savannah, GA

11. MVS Chandrashekhar, Rajesh Duggirala, Amit Lal, M.G. Spencer “Self-powered temperature transducer utilizing beta-radioisotope illuminated 4H SiC betavoltaics”, accepted for presentation at IEEE Sensors 2007, Atlanta, GA

12. MVS Chandrashekhar, M. Qazi, J. Lu, G. Koley, M.G. Spencer “Large Area Nanocrystalline Graphite Films on SiC for Gas Sensing Applications”, accepted for presentation at IEEE Sensors 2007, Atlanta, GA

13. G. Koley, M. Qazi, MVS. Chandrashekhar, M. G. Spencer, T. Vogt, “Investigation of Graphene and Graphite Nano-crystals layers for sensing,” accepted for poster presentation at the Nanoelectronic Devices for Defense and Security Conference, Crystal City, June, 2007.

14. J.G. Felbinger, M.V.S. Chandra, Y. Sun, L.F. Eastman,J. Wasserbauer, F. Faili, D. Babić, D. Francis, F. Ejeckam, “Comparison of GaN HEMTs on Diamond and SiC Substrates”, presented at WOCSDICE 2007, Venice, Italy

15. Huaqiang Wu, Ho-Young Cha, Mvs Chandrashekhar, Goutam Koley, and Michael G. Spencer, “GaN Nanowire Field-Effect Transistor Electrical Characterizations and Surface Passivation,” presented at the ChinaNano Conference, Beijing, China, June, 2005.

16. Huaqiang Wu, Ho-Young Cha, Mvs Chandrashekhar, G. Koley, and M. G. Spencer, “High Yield GaN Nanowire FET Fabrication and Characterizations,” presented at the Electronic Materials Conference, Santa Barbara, California, June 23, 2005

Book Chapters

1. G. Koley, MVS CHandrashekhar. CI Thomas, M.G. Spencer, “Polarization in Wide Bandgap Semiconductors and their Characterization by Scanning Probe Microscopy”, Ed. Colin Wood, Springer, in press

Patents

1. “Betavoltaic Cell” (pending)

2. “Radioisotope referenced harsh environment sensor” (pending)

3. “Polarization doped transistor channels in SiC heteropolytypes” (pending)

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